π Tender Overview
Nanoscale Epitaxial Heterostructures Involving Metal Halides
Overcoming Challenges In Epitaxial Interface Fabrication For Metal Halidesepitaxial Interfaces Are Crucial For Controlling Electron Flow In Electronic, Optical And Catalytic Devices. Current Methods Of Epitaxial Growth Work Well With Traditional Semiconductors But Struggle With Metal Halides, A Challenge That The Eu-Funded Neha Project Could Help Overcome. Researchers Will Seek To Identify Materials That Can Form Epitaxial Heterostructures, Determine Conditions For Their Synthesis, Study Their Properties And Apply Them In Photocatalysis, Photoharvesting And Photonic Devices. The Proposed Research Will Be Based On A Recent Discovery That Epitaxial Heterostructures Based On Metal Halides Can Form When There Is Ionic Sublattice Continuity.
Funded Under
European Research Council (Erc)
Total Cost
β¬ 2 499 375,00
Eu Contribution
β¬ 2 499 375,00
Coordinated By
Fondazione Istituto Italiano Di Tecnologia
Italy